employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides data retention for 45 years while
eliminating the reliability concerns, functional
disadvantages and system design complexities of
battery-backed SRAM. Its fast write and high write
endurance make it superior to other types of
nonvolatile memory.
In-system operation of the FM1608 is very similar to
other RAM based devices. Minimum read- and writecycle
times are equal. The FRAM memory, however,
is nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM1608 is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the serious
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM1608 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a true surface-mount package improves
the manufacturability of new designs, while the DIP
package facilitates simple design retrofits. The
FM1608 offers guaranteed operation over an
industrial temperature range of -40°C to +85°C.