The FM25H20 is a 2-megabit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25H20 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling. The product offers virtually unlimited write
endurance, orders of magnitude more endurance than
Serial Flash. Also, FRAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25H20 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of Serial Flash can
cause data loss.
The FM25H20 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The FM25H20 uses the high-speed SPI bus, which
enhances the high-speed write capability of FRAM
technology. Device specifications are guaranteed
over an industrial temperature range of -40°C to
+85°C.