Pre-Amplifier, Low Level & Low Noise
l High total power dissipation. (PT=450mW)
l High hFE and good linearity
l Complementary to ML9015
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25 oC unless otherwise noted

Electrical Characteristics Ta=25 oC unless otherwise noted

Symbol Parameter Test condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = 100uA, IE=0 50 V
BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB=0 45 V
BVEBO Emitter-Base Breakdown Voltage IE = 100uA, IC=0 5 V
ICBO Collector Cut-off Current VCB = 50V, IE=0 50 nA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 50 nA
hFE DC Current Gain VCE = 5V, IC = 1mA 60 280 1000
VCE (sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 5mA 0.14 0.3 V
VBE (sat) Base-Emitter Saturation Voltage IC = 100mA, IB = 5mA 0.84 1.0 V
VBE (on) Base-Emitter On Voltage VCE = 5V, IC = 2mA 0.58 0.63 0.7 V
Cob Output Capacitance VCB = 10V, IE = 0, f=1MHz 2.2 3.5 pF
fT Current Gain Bandwidth Product VCE = 5V, IC = 10mA 150 270 MHz
NF Noise Figure VCE = 5V, IC = 0.2mA
f=1KHz, RS=2KW
0.9 10 dB