DRAM Chip DDR3 SDRAM 2G-Bit 128M x 16 1.5V 96-Pin TWBGA
INTEGRATED SILICON SOLUTION (ISSI)
存儲(chǔ)器 未驗(yàn)證 易失 DRAM SDRAM - DDR3L 1Gb 128M x 8 并聯(lián) 667 MHz
Winbond Electronics
FRAM SERIAL 16K, SMD, 24C16, SOIC8; Memory Type: FRAM; Memory Size: 16Kbit; NVRAM Memory Configuration: 2K x 8bit; IC Interface Type: 2 Wire, Serial; Access Time: -; Memory Case Style: SOIC; No. of Pins: 8Pins; Supply Voltage Min: 4.5V; Supply Voltage Max: 5.5V; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; MSL: -; Base Number: 24; IC Generic Number: 24C16; Logic Function Number: 24C16; Memory Voltage Vcc: 5V; Operating Temperature Range: -40°C to +85°C; Supply Voltage Range: 4.5V to 5.5V; Termination Type: Surface Mount Device; Vcc Tolerance +: 10%; Vcc Tolerance -: 10%; Voltage Vcc: 5V
Cypress
存儲(chǔ)器 未驗(yàn)證 易失 DRAM SDRAM - DDR3L 1Gb 128M x 8 并聯(lián) 800 MHz
Winbond Electronics
SRAM, 18MBIT, PARALLEL, 3.4NS, 100TQFP; Memory Size: 18Mbit; SRAM Memory Configuration: 512K x 36bit; Supply Voltage Range: 3.135V to 3.6V; Memory Case Style: TQFP; No. of Pins: 100Pins; Access Time: 3.4ns; Operating Temperature Min: 0°C; Operating Temperature Max: 70°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015); Clock Frequency: 167MHz; Operating Temperature Range: 0°C to +70°C; Supply Voltage Max: 3.6V; Supply Voltage Min: 3.135V
Infineon
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