
存儲(chǔ)器 未驗(yàn)證 非易失 RAM MRAM(磁阻式 RAM) 8Mb 1M x 8 SPI - 四 I/O 133 MHz
Everspin Technologies

Graphics Memory, GDDR6, 8Gb, 256Mb, 1.25V, 180-ball FBGA, RoHS
Micron Technology

存儲(chǔ)器 未驗(yàn)證 易失 DRAM SDRAM - 移動(dòng) LPDDR2-S4B 256Mb 16M x 16 HSUL_12 533 MHz
Winbond Electronics

存儲(chǔ)器 未驗(yàn)證 易失 DRAM SDRAM - DDR3L 2Gb 128M x 16 并聯(lián) 1.066 GHz
Winbond Electronics

存儲(chǔ)器 未驗(yàn)證 非易失 RAM MRAM(磁阻式 RAM) 64Mbit 8M x 8 SPI - 四 I/O 133 MHz
Everspin Technologies

存儲(chǔ)器 未驗(yàn)證 易失 DRAM SDRAM - DDR3 1Gb 128M x 8 SSTL_15 667 MHz
Winbond Electronics

SERIAL EEPROM, 4KBIT, 400KHZ, SOIC-8; Memory Size:4Kbit; EEPROM Memory Configuration:512 x 8bit; Memory Interface Type:Serial I2C (2-Wire); Clock Frequency:400kHz; Memory Case Style:SOIC; No. of Pins:8Pins; Supply Voltage Min:1.8V; Supply Voltage Max:5.5V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:4Kbit I2C Serial EEPROM; MSL:MSL 2A - 4 weeks; SVHC:No SVHC (27-Jun-2018); Access Time:900ns; Clock Frequency Max:400kHz; IC Interface Type:Serial I2C; Memory Density:4Kbit; Operating Temperature Range:-40°C to +85°C; Supply Voltage Range:1.8V to 5.5V
Renesas Electronics

