
DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.35V 78-Pin TW-BGA T/R
INTEGRATED SILICON SOLUTION (ISSI)

DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.35V 78-Pin TW-BGA T/R
INTEGRATED SILICON SOLUTION (ISSI)

288Mb RLDRAM 2, 16Mb x 18, 3.3ns, 1.8V, 0 to 95 degC, 144-Ball uBGA
Micron Technology

IC, FRAM, 1MB, SMD, TSOP48; Memory Type:FRAM; Memory Size:1Mbit; NVRAM Memory Configuration:-; IC Interface Type:-; Access Time:100ns; Memory Case Style:TSOP; No. of Pins:48Pins; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Operating Temperature Min:-20°C; Operating Temperature Max:85°C; Product Range:-; RoHS Phthalates Compliant:To Be Advised; MSL:-; Base Number:85; EEPROM Memory Configuration:128K x 8bit; IC Generic Number:85R1001; Logic Function Number:85R1001; Operating Temperature Range:-20°C to +85°C; Supply Voltage Range:3V to 3.6V; Termination Type:Surface Mount Device
Fujitsu

IC, FRAM, 256K, SMD, TSOP28; Memory Type: FRAM; Memory Size: 256Kbit; NVRAM Memory Configuration: -; IC Interface Type: -; Access Time: 150ns; Memory Case Style: TSOP; No. of Pins: 28Pins; Supply Voltage Min: 3V; Supply Voltage Max: 3.6V; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; RoHS Phthalates Compliant: To Be Advised; MSL: -; Base Number: 85; EEPROM Memory Configuration: 32K x 8bit; IC Generic Number: 85R256; Logic Function Number: 85RS256; Operating Temperature Range: -40°C to +85°C; Supply Voltage Range: 3V to 3.6V; Termination Type: Surface Mount Device
Fujitsu
