576Mb RLDRAM 2, 32Mb x 18, 2.5ns, 1.8V, 0 to 95 degC, 144-Ball uBGA
Micron Technology
SRAM, 256K, 32KX8, 2.4-5.5V, PDIP28; Memory Size: 256Kbit; SRAM Memory Configuration: 32K x 8bit; Supply Voltage Range: 2.4V to 5.5V; Memory Case Style: DIP; No. of Pins: 28Pins; Access Time: 55ns; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: To Be Advised; MSL: -; SVHC: No SVHC (07-Jul-2017); Supply Voltage Max: 5.5V; Supply Voltage Min: 2.4V
Brilliance Semiconductor (BSI)
SRAM 4M, 512KX8, 2.4-5.5V, SOP32; Memory Size: 4Mbit; SRAM Memory Configuration: 512K x 8bit; Supply Voltage Range: 2.4V to 5.5V; Memory Case Style: SOP; No. of Pins: 32Pins; Access Time: 55ns; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: To Be Advised; MSL: -; SVHC: No SVHC (07-Jul-2017); Base Number: 62; Memory Type: SRAM; Memory Voltage Vcc: 5V; Operating Temperature Range: -40°C to +85°C; Supply Voltage Max: 5.5V; Supply Voltage Min: 2.4V; Termination Type: Surface Mount Device
Brilliance Semiconductor (BSI)
Memory, Sram, 256Kbit, 70Ns, Soic-28; Memory Size:256Kbit; Sram Memory Configuration:32K X 8Bit; Supply Voltage Range:2.4V To 5.5V; Memory Case Style:soic; No. Of Pins:28Pins; Access Time:70Ns; Operating Temperature Min:0°C
Brilliance Semiconductor (BSI)
Sram, 8M, 1Mx8, 2.7-5.5V, 44Tsopii; Memory Size:8Mbit; Sram Memory Configuration:1M X 8Bit; Supply Voltage Range:2.7V To 5.5V; Memory Case Style:tsop-Ii; No. Of Pins:44Pins; Access Time:55Ns; Operating Temperature Min:-40°C; Rohs Compliant: Yes
Lyontek
IC, FRAM, 256K, SMD, TSOP28; Memory Type: FRAM; Memory Size: 256Kbit; NVRAM Memory Configuration: -; IC Interface Type: -; Access Time: 150ns; Memory Case Style: TSOP; No. of Pins: 28Pins; Supply Voltage Min: 3V; Supply Voltage Max: 3.6V; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; RoHS Phthalates Compliant: To Be Advised; MSL: -; Base Number: 85; EEPROM Memory Configuration: 32K x 8bit; IC Generic Number: 85R256; Logic Function Number: 85RS256; Operating Temperature Range: -40°C to +85°C; Supply Voltage Range: 3V to 3.6V; Termination Type: Surface Mount Device
Fujitsu
Sdram, 128Mbit, 143Mhz, Tsop-54; Dram Type:sdr; Dram Density:128Mbit; Dram Memory Configuration:16M X 8Bit; Clock Frequency:143Mhz; Memory Case Style:tsop; No. Of Pins:54Pins; Supply Voltage Nom:3.3V; Access Time:7Ns Rohs Compliant: Yes
INTEGRATED SILICON SOLUTION (ISSI)
64 Mb PC133 SDR SDRAM, 2 Mb x 32, 6 ns, 3.3 V, 0 to 70 degC, 86-Pin TSOP
Micron Technology
576Mb RLDRAM 2, 32Mb x 18, 3.3ns, 1.8V, 0 to 95 degC, 144-Ball uBGA
Micron Technology
SRAM CMOS 1M, SMD, 431000, SOIC32; Memory Size: 1Mbit; SRAM Memory Configuration: 128K x 8bit; Supply Voltage Range: 4.5V to 5.5V; Memory Case Style: SOIC; No. of Pins: 32Pins; Access Time: 70ns; Operating Temperature Min: 0°C; Operating Temperature Max: 70°C; MSL: -; SVHC: No SVHC (17-Dec-2015); Base Number: 431000; IC Generic Number: 431000; IC Temperature Range: Commercial; Logic Function Number: 431000; Memory Type: SRAM; Memory Voltage Vcc: 5V; Operating Temperature Range: 0°C to +70°C; Supply Voltage Max: 5.5V; Supply Voltage Min: 4.5V; Termination Type: Surface Mount Device
NEC
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