直流反向耐壓(Vr):-;平均整流電流(Io):-;正向壓降(Vf):-;反向電流(Ir):-;正向浪涌電流(Ifsm):-;
Jingdao
BRIDGE RECT 1PHASE 400V 10A GBU
Diodes
BRIDGE RECT 1PHASE 200V 8A GBU
Diodes
BRIDGE RECT 1PHASE 1KV 4A GBU
ON Semiconductor
Diode 70 V 150mA Through Hole DO-35
Microchip Technology
Bridge Rectifiers 600 Volt 4.0 Amp Glass Passivated
Vishay
0.8A Surface Area=800V IR=5 μ A MBS
Jingdao
直流反向耐壓(Vr):1kV;平均整流電流(Io):3A;正向壓降(Vf):1.1V@3A;反向電流(Ir):5uA@1kV;正向浪涌電流(Ifsm):80A;工作溫度:-55℃~+150℃@(Tj);
MDD
BRIDGE RECT 1PHASE 200V 20A GBJ
Diodes
BRIDGE RECT 1P 1KV 50A KBPC-W
Genesic