
單 FET,MOSFET N 通道 MOSFET(金屬氧化物) 40 V 100A(Tc) 2.8 毫歐 @ 25A,10V 2.5V @ 250μA 44.4 nC @ 4.5 V
Comchip Technology

P channel drain-source voltage (Vdss) : 30V Continuous drain current (Id) : 50mA Power (Pd) : 300mW
NXP Semiconductors

N channel +P channel VDS1=30V ID1=7.3A VDS2=-30V ID2=-5.3A VGS=±20V P=2.5W channel 2
Trinamic

2N channel +2P channel VDS1=30V ID1=5.5A VDS2=-30V ID2=-4.1A VGS=±20V P=1.38W 4 channel
Trinamic

N channel +P channel VDS1=60V ID1=6.6A VDS2=-60V ID2=-4.7A VGS=±20V P=3.13W channel 2
Trinamic

單 FET,MOSFET P 通道 MOSFET(金屬氧化物) 60 V 1.25A(Ta) 4.5V,10V 170 毫歐 @ 1.25A,10V 3V @ 250μA 13.8 nC @ 10 V
ON Semiconductor
