
Fast IGBT in NPT-Technology with Soft, Fast Recovery Anti-Parallel EmCon Diode, PG-TO-247-3, Tube, Green
Infineon

IGBT - 650V, 120A Field Stop Trench IGBT with VCESAT and VTH Binning
ON Semiconductor

Single Igbt, 600V, 54A; Continuous Collector Current:54A; Power Dissipation:167W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:msl 1 - Unlimited Rohs Compliant: Yes
ON Semiconductor

900?V IGBT in TrenchStop? and Fieldstop Technology with Anti-Parallel Diode, 60?A IC, -40 to 175 degC, PG-TO247-3-44, Tube, Green
Infineon




