
Infineon’s highly innovative OptiMOS? families include p-channel power MOSFETs, PG-DSO-8, RoHS
Infineon

MOSFET, N-CH, 600V, 46A, TO-3PF; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 130W; Transistor Case Style: TO-3PF; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Rohm

Lowest on-state resistance in small footprint packages make OptiMOS?3 30V the best choice for the demanding requirements of battery management, Or-ing, e-fuse and hot-swap application, PG-TO263-7, RoHS
Infineon

With the OptiMOS? 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, MG-WDSON-2, RoHS
Infineon

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS? 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS
Infineon



